advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 25v fast switching r ds(on) 12m simple drive requirement i d 11.8a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-amb thermal resistance junction-ambient 3 max. 50 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.02 continuous drain current 3 9.4 pulsed drain current 1 30 gate-source voltage continuous drain current 3 11.8 parameter rating drain-source voltage 25 20020507 AP7811M the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s 12 s s s g d d d d so-8 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 25 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.1 - v/ r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =11.8a - 10 12 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.2 v g fs forward transconductance v ds =15v, i d =11.8a - 30 - s i dss drain-source leakage current (t j =25 o c) v ds =25v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =20v, v gs =0v - - 25 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =11.8a - 32 - nc q gs gate-source charge v ds =20v - 2.6 - nc q gd gate-drain ("miller") charge v gs =5v - 15.5 - nc t d(on) turn-on delay time 2 v ds =15v - 12 - ns t r rise time i d =1.5a - 28 - ns t d(off) turn-off delay time r g =3.3 , v gs =5v - 41 - ns t f fall time r d =10 -40- ns c iss input capacitance v gs =0v - 800 - pf c oss output capacitance v ds =20v - 460 - pf c rss reverse transfer capacitance f=1.0mhz - 215 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.2v - - 2.08 a v sd forward on voltage 2 t j =25 , i s =2.3a, v gs =0v - - 1.2 v notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board ; 125 /w when mounted on min. copper pad. AP7811M 12v 100
AP7811M fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 8 10 12 14 16 18 23456 v gs (v) r ds(on) (mohm) i d =11.8a t c =25 o c 0.60 0.80 1.00 1.20 1.40 1.60 1.80 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v gs =4.5v i d =11.8a 0 10 20 30 40 0 0.5 1 1.5 2 2.5 3 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 4.5v 3.5v 3.0v 2.5v v gs =2.0v 0 10 20 30 0 0.5 1 1.5 2 2.5 3 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 4.5v 3.5v 3.0v 2.5v v gs =2.0v
fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance AP7811M 0 0.5 1 1.5 2 2.5 3 0 30 60 90 120 150 t c , case temperature ( o c) p d (w) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =125 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds (v) i d (a) t c =25 o c single pulse 1ms 10ms 100ms 1s 10s d c 0 3 6 9 12 15 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a)
AP7811M fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature 100 1000 10000 1 5 9 13 17 21 25 29 v ds (v) c (pf) f =1.0mhz ciss coss crss 0 2 4 6 8 10 12 0 102030405060 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =10v v ds =15v v ds =20v 0.01 0.10 1.00 10.00 100.00 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd (v) i s (a) t j =25 o c t j =150 o c 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 junction temperature ( o c ) v gs(th) (v) i d =11.8a
AP7811M fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 5v q gs q gd q g charge 0.6 x rated v ds to the oscilloscope - + 5 v d g s v ds v gs r g r d 0.8 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g
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